High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani (1, 2) , Pascal Bevilacqua (1, 2) , A. Zaoui (1, 2) , G Grosset (3) , Dominique Planson (1, 2) , Hervé Morel (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 IBS - Ion Beam Services

This paper reports the design, the processing, the static characterisation, the switching behaviour and the high current stress test of 10 kV aimed 4H-SiC bipolar diodes. The actual breakdown voltage of the selected devices is between 7 kV and 8 kV. The switching characterisations show a good behaviour with a t rr of only 90 ns. No degradation was observed after the application of 10 000 high current pulses during the stress tests.

Mots clés: device robustness; double-pulse test; high current stress; device processing; high voltage device; 4H-SiC bipolar diode

Domaines: Energie électrique

Besar Asllani, Pascal Bevilacqua, A. Zaoui, G Grosset, Dominique Planson, et al.. High-Voltage SiC-JFET Fabrication and Full Characterization. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5. ⟨hal-02428523⟩