Static characteristics of 5 kV SiC BJTs and Darlington’s

Besar Asllani (1) , Dominique Planson (2, 3) , Hervé Morel (3, 2) , T Lagier (1)

1 SuperGrid Institute SAS
2 EE - Ampère, Département Energie Electrique
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon

High voltage low current SiC BJT transistors are interesting devices for applications like active filters, current limiters and active snubbers where high voltage blocking capabilities are required. Few attempts[1]–[3] have proved that such devices can be manufactured and fulfill the requirements in terms of breakdown voltage, beta and reliability. SuperGrid Institute has designed 10 kV - 5A SiC BJTs as a proof of concept with the aim to increase the nominal current rating to 50 A. This devices are intended to operate in the abovementioned applications and also to be employed as a power switch in HVDC converters. This abstract evaluates the static performances of the first run of 10 kV – 5 A BJTs from SuperGrid. The switching performance will be assessed and reported in the full paper.

Domaines: Energie électrique

Besar Asllani, Dominique Planson, Hervé Morel, T Lagier. Static characteristics of 5 kV SiC BJTs and Darlington’s. International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. ⟨hal-02428513⟩