Defect State Analysis in Ion‐Irradiated Amorphous‐Silicon Heterojunctions by HAXPES

Min-I Lee (1) , Alice Defresne (2) , Olivier Plantevin (2) , Denis Céolin (3) , Jean-Pascal Rueff (3, 4) , Pere Roca I Cabarrocas (5) , Antonio Tejeda (1)

1 LPS - Laboratoire de Physique des Solides
2 CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
3 SSOLEIL - Synchrotron SOLEIL
4 LCPMR - Laboratoire de Chimie Physique - Matière et Rayonnement
5 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]

The efficiency in HIT (Heterojunction with Intrinsic Thin film) solar cells strongly depends on the passivation of dangling bonds at the a-Si:H/c-Si interface by hydrogen, introduced in the plasma enhanced CVD process. Here in, we study controlled defects that are introduced by Ar ion irradiation. We observe by hard X-ray photoemission spectroscopy (HAXPES) that during Ar ion implantation, Si-H bonds in the a-Si:H layer are broken and become dangling bonds. We quantify the number of dangling bonds in the a-Si:H layer, and we identify the electronic states associated to them, which explains previously observed photoluminescence transitions.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Min-I Lee, Alice Defresne, Olivier Plantevin, Denis Céolin, Jean-Pascal Rueff, et al.. Defect State Analysis in Ion‐Irradiated Amorphous‐Silicon Heterojunctions by HAXPES. physica status solidi (RRL) - Rapid Research Letters, 2019, 13 (5), pp.1800655. ⟨10.1002/pssr.201800655⟩. ⟨hal-02349087⟩