Theoretical Study of Intersubband Absorption Coefficient in GaNAsBi/GaAs Quantum Well Structures

Lynda Chenini (1) , Abdelkader Aissat (1, 2) , Jean-Pierre Vilcot (2, 3)

1 LATSI - Laboratoire de Traitement de Signal et Imagerie [Blida]
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 OPTO - IEMN - Optoélectronique - IEMN

This work focuses on the study and simulation of a based intersubband GaNAsBi/GaAs quantum well structure. The effect of different physical and optical parameters has been explored. The band gap of GaNAsBi is calculated using the band anti-crossing model. The influence of the composition and the quantum well width on the intersubband transition within the conduction band has been examined and discussed. We will discuss in detail the influence of these structural parameters on the intersubband absorption coefficient. So, two features have been observed: the evolution of characteristics and the shift of the corresponding emission wavelength. Our simulation contributes to designing and fabricating based GaNAsBi/GaAs optoelectronic intersubband devices in the mid infrared region.

Mots clés: Intersubband transition; BAC model; Absorption coefficient; GaNAsBi/GaAs

Domaines: Sciences de l'ingénieur [physics]; Matériaux; Micro et nanotechnologies/Microélectronique

Lynda Chenini, Abdelkader Aissat, Jean-Pierre Vilcot. Theoretical Study of Intersubband Absorption Coefficient in GaNAsBi/GaAs Quantum Well Structures. 1st International Conference on Electronic Engineering and Renewable Energy, Apr 2018, Saidia, Morocco. pp.216-224, ⟨10.1007/978-981-13-1405-6_26⟩. ⟨hal-02409596⟩