Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods

W. Liu (1) , G. Rossbach (2) , A. Avramescu (3) , T. Schimpke (3) , H.-J. Lugauer (3) , M. Strassburg (3) , C. Mounir (4) , U. Schwarz (5) , B. Deveaud (1) , Gwenolé Jacopin (6)

1 EPFL - Ecole Polytechnique Fédérale de Lausanne
2 OSRAM Opto Semiconductors GmbH
3 OSRAM Opto Semiconductors GmBH
4 IMTEK - Department of Microsystems Engineering [Freiburg]
5 Chemnitz University of Technology / Technische Universität Chemnitz
6 NEEL - SC2G - Semi-conducteurs à large bande interdite

Domaines: Matière Condensée [cond-mat]; Optique / photonique; Micro et nanotechnologies/Microélectronique

W. Liu, G. Rossbach, A. Avramescu, T. Schimpke, H.-J. Lugauer, et al.. Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods. Physical Review B, 2019, 100 (23), pp.235301. ⟨10.1103/PhysRevB.100.235301⟩. ⟨hal-02397516⟩