Numerical Study of the Impact of Junction Depth and the Surface Recombination Velocity on Electrical Parameters of GaAs-Solar Cell

Abdelkader Baghdad Bey (1, 2) , Abbassia Talbi (2) , Mourad Hebali (3) , Mohammed Berka (1, 2) , Frédérique Ducroquet (4)

1 UMSM - Université Mustapha Stambouli de Mascara [Algérie] = University Mustapha Stambouli [Mascara, Algeria]
2 UDL - جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria]
3 ENPO-MA - École Nationale Polytechnique d'Oran Maurice Audin
4 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

Solar energy based on the solar cell is the most promising source among renewable energy sources. The photocurrent (Iph), open circuit voltage (Voc), maximum voltage (Vm), form factor (FF) and efficiency (η) of the solar cell are the most important parameters that can define the quality of this cell. In this work, we study the impact of the junction depth Xj and the surface recombination velocity Sn on these parameters in both external and internal cases of the solar cell in Arsenic gallium (GaAs) technology using the MATLAB software as a tool. Results show that in order to obtain highperformance of GaAs-solar cells must be the surface recombination velocity value is low, and the junction depth in submicron scale. Numerical results gave higher values of efficiencies 19.21 % and 30.1 % in external and internal cases respectively, and best electrical parameters of the GaAs-solar cell when the junction depth and the surface recombination velocity are equal to 0.2 μm and 102 cm/s respectively.

Mots clés: GaAs; Efficiency; Electrical parameters.; GaAs

Domaines: Micro et nanotechnologies/Microélectronique

Abdelkader Baghdad Bey, Abbassia Talbi, Mourad Hebali, Mohammed Berka, Frédérique Ducroquet. Numerical Study of the Impact of Junction Depth and the Surface Recombination Velocity on Electrical Parameters of GaAs-Solar Cell. International journal of advanced Science and Engineering, 2019, 5 (3), pp.1064-1071. ⟨10.29294/IJASE.5.3.2019.1064-1071⟩. ⟨hal-02393349⟩