Multifunctional Photodetectors Based on Nanolayered Black Phosphorus/SnS0.5Se1.5 Heterostructures

Xin Luo (1, 2) , Bochong Wang (3) , Wenxing Lv (2) , Yan Wang (4) , Weiming Lv (2) , Zhongming Wei (4) , Yuan Lu (5) , Zhongyuan Liu (3) , Zhihong Lu (6) , Rui Xiong (1) , Zhongming Zeng (2)

1 KLAMNME - Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People’s Republic of China
2 Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China
3 Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
4 UCAS - University of Chinese Academy of Sciences [Beijing]
5 IJL - Institut Jean Lamour
6 The State Key Laboratory of Refractories and Metallurgy, School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, People’s Republic of China

van der Waals (vdW) heterostructures have recently emerged as promising artificial structures to create new functionalities for nano-and optoelectronic applications. In this work, we successfully fabricate BP/SnS 0.5 Se 1.5 vdW heterostructures and systematically study their electronic and photoresponsive properties. An unusual gate-tuned photoresponse characteristic is found. At the negative gate range, a positive photocurrent response is achieved, while a negative photocurrent response appears when a sweeping positive gate is applied. In addition, the photocurrent response can also be tuned by the channel length of each semiconductor in the heterostructure. The photodetector based on BP/SnS 0.5 Se 1.5 vdW heterostructures has combined both advantages of BP and SnS 0.5 Se 1.5 to realize both high photoresponse sensitivity and sign tuning ability. This device demonstrates promising potential in future multifunctional electronic and optoelectronic applications.

Mots clés: multifunctional photodetector; gate-tuned; negative photocurrent; vdW heterostructures; gate tuned; heterostructures; black phosphorus

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Xin Luo, Bochong Wang, Wenxing Lv, Yan Wang, Weiming Lv, et al.. Multifunctional Photodetectors Based on Nanolayered Black Phosphorus/SnS0.5Se1.5 Heterostructures. ACS Applied Nano Materials, 2019, 2, pp.3548. ⟨10.1021/acsanm.9b00513⟩. ⟨hal-02388074⟩