Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

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https://hal.archives-ouvertes.fr/hal-02356751
Contributor : Farid Medjdoub <>
Submitted on : Friday, November 8, 2019 - 11:22:35 PM
Last modification on : Saturday, November 9, 2019 - 1:54:44 AM

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M. Borga, M. Meneghini, D. Benazzi, E. Canato, R. Püsche, et al.. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability, Elsevier, 2019, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩. ⟨hal-02356751⟩

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