Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

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https://hal.archives-ouvertes.fr/hal-02356740
Contributor : Farid Medjdoub <>
Submitted on : Friday, November 8, 2019 - 10:58:58 PM
Last modification on : Saturday, November 9, 2019 - 1:54:44 AM

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M. Rzin, M. Meneghini, F. Rampazzo, V. Gao Zhan, C. de Santi, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. Microelectronics Reliability, Elsevier, 2019, pp.113388. ⟨10.1016/j.microrel.2019.06.080⟩. ⟨hal-02356740⟩

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