High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Riad Kabouche (1) , Romain Pecheux , Kathia Harrouche , Etienne Okada (1, 2) , F Medjdoub (1, 3) , Joff Derluyn (4) , Stefan Degroote (4) , Marianne Germain (4) , Filip Gucmann , Callum Middleton , James W Pomeroy , Martin Kuball

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 WIND - IEMN - WIde baNd gap materials and Devices - IEMN
4 EpiGaN

In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.

Mots clés: High electron mobility transistors (HEMTs); Double heterostructure field effect transistor (DHFET); GaN; Raman thermography; output power density (POUT); power added efficiency (PAE)

Domaines: Micro et nanotechnologies/Microélectronique

Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, F Medjdoub, et al.. High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation. International Journal of High Speed Electronics and Systems, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩. ⟨hal-02356733⟩