NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations

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https://hal.archives-ouvertes.fr/hal-02351115
Contributor : Marco Pala <>
Submitted on : Wednesday, November 6, 2019 - 11:53:52 AM
Last modification on : Friday, November 8, 2019 - 1:20:46 AM

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Marco G. Pala, Oves Badami, David Esseni. NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations. 2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, France. pp.35.1.1-35.1.4, ⟨10.1109/IEDM.2017.8268498⟩. ⟨hal-02351115⟩

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