Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation

Fabian Cadiz (1) , D. Paget (1) , A. Rowe (1) , V. Berkovits , V. Ulin , S. Arscott (2) , Emilien Peytavit (2)

1 LPMC - Laboratoire de physique de la matière condensée
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]

Fabian Cadiz, D. Paget, A. Rowe, V. Berkovits, V. Ulin, et al.. Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation. Journal of Applied Physics, 2013, 114 (10), pp.103711. ⟨10.1063/1.4821139⟩. ⟨hal-02345653⟩