Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-based Memristors at Cryogenic Temperature (1.5 K)

Y. Beilliard (1, 2) , F Paquette , F Brousseau (1, 2) , S. Ecoffey (3, 1, 2) , F. Alibart (4, 1, 2, 5) , D. Drouin (1, 2)

1 LN2 - Laboratoire Nanotechnologies Nanosystèmes
2 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
3 UdeS - Université de Sherbrooke
4 NCM - IEMN - Nanostructures, nanoComponents & Molecules - IEMN
5 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]

Y. Beilliard, F Paquette, F Brousseau, S. Ecoffey, F. Alibart, et al.. Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-based Memristors at Cryogenic Temperature (1.5 K). IEEE Nanotechnology Materials and Devices Conferences NMDC, Oct 2019, Stockholm, Sweden. ⟨hal-02320603⟩