Low-noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors
Résumé
We present the noise performance of high electron mobility transistors (HEMT) developed by CNRS/C2N laboratory. Various HEMT’s gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and current noises has been developed with frequency dependence up to 1 MHz. These HEMTs exhibit low dissipation, excellent noise performance and can advantageously replace traditional Si-JFETs for the readout of high impedance thermal sensor and semiconductor ionization cryogenic detectors. Our model predicts that cryogenic germanium detectors of 30 g with 10 eV heat and 20 eV$_\mathrm{ee}$ baseline resolution are feasible if read out by HEMT-based amplifiers. Such resolution allows for high discrimination between nuclear and electron recoils at low threshold. This capability is of major interest for coherent elastic neutrino scattering and low-mass dark matter experiments such as Ricochet and EDELWEISS.