Ka band test fixture with DC bias circuit for active device characterization

Marc Le Goff (1, 2) , Daniel Bourreau (1, 2) , Alain Peden (1, 2)

1 LEST - Laboratoire d'Electronique et Systèmes de Télécommunications
2 MO - Département Micro-Ondes

This paper presents the S parameter measurements of PHEMT chip transistors in the Ka band. The transistor is mounted on an alumina substrate on which the DC bias circuit is included using a multilayer technology. This is an interesting solution because the bias circuit is used to improve the stability of the active device especially in the low frequency range by implementing SMC resistors and capacitors.

Mots clés: Circuit testing; Scattering parameters; Semiconductor device measurement; PHEMTs; Circuit stability; Sliding mode control

Domaines: Electronique

Marc Le Goff, Daniel Bourreau, Alain Peden. Ka band test fixture with DC bias circuit for active device characterization. EUMC'98: 28th EUropean Microwave Conference, Oct 1998, Amsterdam, Netherlands. pp.247-252, ⟨10.1109/EUMA.1998.337995⟩. ⟨hal-02282632⟩