Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices

Christophe Raynaud (1) , Dominique Tournier (1) , Hervé Morel (1) , Dominique Planson (1)

1 EE - Ampère, Département Energie Electrique

Temperature dependant properties of wide band gap semiconductors have been used to calculate theoretical specific on-resistance, breakdown voltage, and thermal run away temperature in SiC, GaN and diamond, and Si vertical power devices for comparison. It appears mainly that diamond is interesting for high power devices for high temperature applications. At room temperature, diamond power devices should be superior to SiC only for voltage higher than 30-40 kV, due to the high energy activation of the dopants.

Mots clés: Semiconductor materials; Power semiconductor devices; wide bandgap

Domaines: Sciences de l'ingénieur [physics]; Energie électrique

Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson. Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices. Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩. ⟨hal-02186368⟩