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Article Dans Une Revue Semiconductor Science and Technology Année : 2019

Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering

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hal-02169850 , version 1 (01-07-2019)

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Fabien Rozé, Francois Pierre, Olivier Gourhant, François Bertin, Elisabeth Blanquet, et al.. Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering. Semiconductor Science and Technology, 2019, 34 (6), pp.065005. ⟨10.1088/1361-6641/ab171c⟩. ⟨hal-02169850⟩
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