Pulse Characterization of Optically Triggered SiC Thyristors

Nicolas Dheilly (1, 2) , Gontran Pâques (3) , Sigo Scharnholz (3) , Dominique Planson (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 ISL - Institut franco-allemand de recherches de Saint-Louis

This paper deals with the pulse capabilities of 4H-SiC optically triggered thyristors. The device structure and the fabrication process are presented. The results of pulse characterizations are shown. Two types of current pulses were used, a short (pulse width of 10 µs) and a long (pulse width of 650 µs). Peak current densities of 17 kA.cm-2 and 4 kA.cm-2 were attained with short and long pulses respectively. The failures and degradation caused by these experiments are also shown in this paper.

Mots clés: Silicon carbide; Light triggered thyristor; LTT; pulse power

Domaines: Energie électrique

Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Dominique Planson. Pulse Characterization of Optically Triggered SiC Thyristors. Materials Science Forum, 2012, 717-720, pp.1179-1182. ⟨10.4028/www.scientific.net/MSF.717-720.1179⟩. ⟨hal-02166420⟩