Disturbance and recovery in high speed (110) cleavage in single crystalline silicon

Lv Zhao (1) , Meng Wang (1) , Anne Maynadier (2) , Daniel Nelias (1)

1 LaMCoS - Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne]
2 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)

Stress perturbations and material defects can significantly affect the fracture initiation and propagation behaviors in brittle materials. In this work, we show that (110)[110] cleavage in silicon deflects onto (111) plane in the presence of contact stresses. The deflection is however not permanent as the crack returns to the (110) plane after a certain length of propagation, even in the case where the crack velocity is up to 78% of the Rayleigh wave speed. The recovery behavior indicates that the (110)[110] cleavage is invariably prevailing when perpendicular to the maximum stress. Following this indication, it can be concluded that the observed (110)[110]–(111) deflection in previous literature is more likely driven by the external disturbance rather than the crack velocity induced toughness evolution. We also highlight that the extra energy for the (110) recovery is minimized at the expense of a large propagation distance upon the plane switch.

Mots clés: Crack deflection; Fracture; Silicon single crystal; High speed propagation

Domaines: Mécanique [physics]; Sciences de l'ingénieur [physics]

Lv Zhao, Meng Wang, Anne Maynadier, Daniel Nelias. Disturbance and recovery in high speed (110) cleavage in single crystalline silicon. Journal of the European Ceramic Society, 2018, 38 (4), pp.1038 - 1045. ⟨10.1016/j.jeurceramsoc.2017.12.035⟩. ⟨hal-02130058⟩