Strain-mediated all-magnetoelectric memory cell

Vladimir Preobrazhensky (1, 2, 3) , L. Krutyansky (4, 1) , Nicolas Tiercelin (1, 2, 3) , Yannick Dusch (1, 2, 3) , A. Sigov (5) , Philippe Pernod (1, 2, 3) , Stefano Giordano (1, 2, 3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 AIMAN-FILMS - IEMN - Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN
3 LIA LICS/LEMAC - Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique
4 1 A.M. Prokhorov General Physics Institute, RAS, Russia, Moscow
5 MIREA - Russian Technological University

Downscaling of magnetoelectric random access memory device (MELRAM) is considered by studying an example of the hybrid structure based on ferroelectric-magnetostrictive metal. Elastic mechanism of magnetoelectric interaction is analyzed by numerical modeling taking into account inhomogeneous distribution of anisotropic strain, ferroelec-tric polarization and electric field. The proposed shape of the cell allows to decrease the inhomogeneity of the strain in the magnetic subsystem and to achieve remarkable dynamic characteristics for a nanometric device sized nm 3 : we adopted an input voltage of V0=90 mV and obtained a switching time tS=1.1 ns, an output readout voltage VME=4.7 mV and an ultra-low energy consumption 13aJ/bit.

Mots clés: ferroelectric; magnetoelectric memory; magnetostriction; inhomogeneous strain; dynamic parameters; energy efficiency

Domaines: Physique [physics]; Sciences de l'ingénieur [physics]; Electromagnétisme; Micro et nanotechnologies/Microélectronique

Vladimir Preobrazhensky, L. Krutyansky, Nicolas Tiercelin, Yannick Dusch, A. Sigov, et al.. Strain-mediated all-magnetoelectric memory cell. Ferroelectrics, 2018, 532 (1), pp.160-167. ⟨10.1080/00150193.2018.1499403⟩. ⟨hal-02127943⟩