Temperature dependency of the strain distribution induced by TSVs in silicon: A comparative study between micro-Laue and monochromatic nano-diffraction

B. Vianne (1, 2) , Stephanie Escoubas (2) , C. Krauss (3) , M.-I. Richard (2) , S. Labat (2) , G. Chahine (4) , S. Micha , T. Schulli (5) , V. Fiori (6) , A. Farcy (6) , O. Thomas (2)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 PPrime [Poitiers] - Institut Pprime [UPR 3346]
4 SIMaP - Science et Ingénierie des Matériaux et Procédés
5 ESRF - European Synchrotron Radiation Facility
6 STMicroelectronics

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

B. Vianne, Stephanie Escoubas, C. Krauss, M.-I. Richard, S. Labat, et al.. Temperature dependency of the strain distribution induced by TSVs in silicon: A comparative study between micro-Laue and monochromatic nano-diffraction. Microelectronic Engineering, 2016, 156, pp.59-64. ⟨10.1016/j.mee.2016.03.003⟩. ⟨hal-02114595⟩