Te homogeneous precipitation in Ge dislocation loop vicinity

J Perrin Toinin , A. Portavoce (1) , M. Texier (1) , M. Bertoglio (1) , K. Hoummada (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

High resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge. Te atoms neither segregate nor precipitate on dislocation loops, but form Te-Ge clusters at the same depth as dislocation loops, in contradiction with usual dopant behavior and thermodynamic expectations. Atomistic kinetic Monte Carlo simulations show that Te atoms are repulsed from dislocation loops due to elastic interactions, promoting homogeneous Te-Ge nucleation between dislocation loops. This phenomenon is enhanced by coulombic interactions between activated Te2þ or Te1þ ions.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

J Perrin Toinin, A. Portavoce, M. Texier, M. Bertoglio, K. Hoummada. Te homogeneous precipitation in Ge dislocation loop vicinity. Applied Physics Letters, 2016, 108. ⟨hal-02111623⟩