Controlling high-mobility conduction in SrTiO3 by oxide thin film deposition

G. Herranz (1, 2) , M. Basletić (2, 3) , O. Copie (2) , M. Bibes (2) , A. Khodan (2, 4) , C. Carretero (2) , E. Tafra (3) , E. Jacquet (2) , K. Bouzehouane (2) , A. Hamzić (3) , A. Barthelemy (2)

1 ICMAB - Institut de Ciència de Materials de Barcelona
2 Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
3 Department of Physics [Zagreb]
4 A.N. Frumkin Institute of Physical Chemistry and Electrochemistry

SrTiO3 becomes a high-mobility metallic conductor when doped with oxygen vacancies at low concentrations (≥1016 cm−3). We show that the vacancy concentration in the SrTiO3 single crystal substrates could be controllably tuned by changing the thickness of oxide films (deposited by pulsed laser deposition at high temperature and low oxygen pressure). The obtained variation in the carrier density strongly influences the transport properties. The quantitative analysis of the experimental results leads toward new and accurate strategies for the design of multifunctional oxide heterostructures for electronics and spintronics.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

G. Herranz, M. Basletić, O. Copie, M. Bibes, A. Khodan, et al.. Controlling high-mobility conduction in SrTiO3 by oxide thin film deposition. Applied Physics Letters, 2009, 94 (1), pp.012113. ⟨10.1063/1.3063026⟩. ⟨hal-02106688⟩