Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Ilyas Dchar (1) , Cyril Buttay (2) , Hervé Morel (2)

1 SuperGrid Institute SAS
2 EE - Ampère, Département Energie Electrique

Fail-to-short packages, which can still carry current after the failure of their semiconductor devices, are required for HVDC applications. However, all existing solutions are dedicated to silicon components. Here, a fail-to-short package is proposed for SiC devices. Its manufacturing process is described. 4 modules are built and submitted to intense short circuit currents (up to 2000 A). It is found that they offer a stable short-circuit failure mode, providing that the modules are mechanically clamped to prevent separation during the surge current test.

Domaines: Energie électrique

Ilyas Dchar, Cyril Buttay, Hervé Morel. Packaging Solution for SiC Power Modules with a Fail-to-Short Capability. APEC, Mar 2019, Anaheim, Californie, United States. ⟨10.1109/APEC.2019.8722126⟩. ⟨hal-02076181⟩