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Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Abstract : Fail-to-short packages, which can still carry current after the failure of their semiconductor devices, are required for HVDC applications. However, all existing solutions are dedicated to silicon components. Here, a fail-to-short package is proposed for SiC devices. Its manufacturing process is described. 4 modules are built and submitted to intense short circuit currents (up to 2000 A). It is found that they offer a stable short-circuit failure mode, providing that the modules are mechanically clamped to prevent separation during the surge current test.
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Contributor : Cyril Buttay <>
Submitted on : Friday, March 22, 2019 - 12:39:11 AM
Last modification on : Wednesday, July 8, 2020 - 12:43:52 PM
Document(s) archivé(s) le : Sunday, June 23, 2019 - 12:37:22 PM


  • HAL Id : hal-02076181, version 1


Ilyas Dchar, Cyril Buttay, Hervé Morel. Packaging Solution for SiC Power Modules with a Fail-to-Short Capability. APEC, Mar 2019, Anaheim, Californie, United States. ⟨hal-02076181⟩



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