Statistical analysis of CBRAM endurance

D. Alfaro Robayo (1, 2) , C. Nail (1) , G. Sassine (1) , J. F Nodin (1) , M. C. Bernard (1) , Q. Raffay (2) , G. Ghibaudo (2) , G. Molas (1) , E. Nowak (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

In this paper, we address endurance reliability of resistive RAM at array level. To this aim, Al 2 O 3 based Conductive Bridging RAM (CBRAM) kb arrays are studied. Maximum number of cycles the memory can sustain is statistically analyzed. Impact of SET and RESET conditions and Al 2 O 3 thickness on endurance distributions is discussed. Finally, gradual endurance degradation mechanism is discussed along with defect generation in the resistive layer.

Domaines: Micro et nanotechnologies/Microélectronique

D. Alfaro Robayo, C. Nail, G. Sassine, J. F Nodin, M. C. Bernard, et al.. Statistical analysis of CBRAM endurance. 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. pp.115-116, ⟨10.1109/VLSI-TSA.2018.8403856⟩. ⟨hal-02050364⟩