Effects of fully depleted SOI on ultra-fast swing slope of 1T-DRAM memory

S. Kwon (1) , M. Choi , Y.T. Kim (2) , I.S. Park , Jinho Ahn (3) , Sorin Cristoloveanu, (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 KAIST - Department of Electrical Engineering [Korea Advanced Institute of Science and Technology]
3 Department of Materials Science and Engineering

Domaines: Micro et nanotechnologies/Microélectronique

S. Kwon, M. Choi, Y.T. Kim, I.S. Park, Jinho Ahn, et al.. Effects of fully depleted SOI on ultra-fast swing slope of 1T-DRAM memory. 4th Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE 2016), Nov 2016, Jeju, South Korea. ⟨hal-02009901⟩