Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs

S.J. Chang (1) , Mayline Bawedin (2) , François Andrieu (3) , Carlos Navarro (2) , Y.T. Kim (4) , Y. Bae (5) , Sorin Cristoloveanu, (2)

1 Department of Electrical Engineering [Yale University]
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 KAIST - Department of Electrical Engineering [Korea Advanced Institute of Science and Technology]
5 Uiduk university, Gyeongju

Domaines: Micro et nanotechnologies/Microélectronique

S.J. Chang, Mayline Bawedin, François Andrieu, Carlos Navarro, Y.T. Kim, et al.. Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs. 19th Conference on Insulating Films on Semiconductors (INFOS), Jun 2015, Udine, Italy. pp.81-82. ⟨hal-02009766⟩