Investigation on built-in BJT in FD-SOI BIMOS

Thomas Bedecarrats (1) , Philippe Galy (2) , Claire Fenouillet-Beranger (3) , Sorin Cristoloveanu (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

The built-in BJT of a BIMOS fabricated in 28nm UTBB FD-SOI high-k metal technology from ST Microelectronics is investigated in common-emitter mode and in MOSFET off-state. In the weak V BE regime, field-effects dominate, generating a negative base current and making the current gain β0 meaningless. For V be high enough, the BJT works normally but with and a very low gain.

Mots clés: FD-SOI; body-contacted; MOSFET; BIMOS

Domaines: Micro et nanotechnologies/Microélectronique

Thomas Bedecarrats, Philippe Galy, Claire Fenouillet-Beranger, Sorin Cristoloveanu. Investigation on built-in BJT in FD-SOI BIMOS. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.169-172, ⟨10.1109/ULIS.2018.8354761⟩. ⟨hal-02007258⟩