Optimization guidelines of A2RAM cell performance through TCAD simulations

F. Tcheme Wakam (1) , J. Lacord (1) , S. Martinie (1) , Jean-Charles Barbé (1) , F. Tcheme Wakam (2) , M. Bawedin (2) , S. Cristoloveanu (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

A2RAM belongs to the 1T-DRAM family and is a potential candidate to replace the traditional 1T/1C- DRAM [1-2]. In this paper, we propose a TCAD simulation [3] methodology to assess A2RAM performance, validated through experimental measurement. It is then used to provide further insight in A2RAM and optimization guidelines.

Mots clés: DRAM; electrical characterization; optimization; A2RAM; TCAD; 1T-DRAM

Domaines: Micro et nanotechnologies/Microélectronique

F. Tcheme Wakam, J. Lacord, S. Martinie, Jean-Charles Barbé, F. Tcheme Wakam, et al.. Optimization guidelines of A2RAM cell performance through TCAD simulations. 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2017, Kamakura, Japan. pp.329-332, ⟨10.23919/SISPAD.2017.8085331⟩. ⟨hal-02007238⟩