GDNMOS: A new high voltage device for ESD protection in 28nm UTBB FD-SOI technology

S. Athanasiou (1) , Charles-Alexandre Legrand (2) , S. Cristoloveanu (1) , Ph. Galy (2)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

We propose a novel device (GDNMOS: Gated Diode merged NMOS) fabricated with 28nm UTBB FD-SOI high-k metal gate technology. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation, in particular in thyristor mode. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior.

Mots clés: CMOS; Thyristor; ESD; SOI; MOSFET; FD-SOI; Gated Diode

Domaines: Micro et nanotechnologies/Microélectronique

S. Athanasiou, Charles-Alexandre Legrand, S. Cristoloveanu, Ph. Galy. GDNMOS: A new high voltage device for ESD protection in 28nm UTBB FD-SOI technology. 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.151-154, ⟨10.1109/ULIS.2016.7440075⟩. ⟨hal-02006258⟩