Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Teng Zhang (1, 2) , Christophe Raynaud (1, 2) , Dominique Planson (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon

Schottky barrier height (SBH) has been characterized on 4H-SiC Schottky diodes with metal contact of Ti/W by Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements between 80 K and 400 K. Multi-barrier has been recognized and calculated according to different models. No clear difference has been found between single barrier diode and diode with multi-barrier from DLTS tests. Evolution on the I-V characteristics has been observed after high temperature annealing. The effect of annealing at room temperature (RT) and high temperature DLTS scan (stress under high temperature) have also been studied on both static characteristics and DLTS results.

Mots clés: SiC; DLTS; multi barrier; Schottky

Domaines: Electronique

Teng Zhang, Christophe Raynaud, Dominique Planson. Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. ⟨hal-02004837⟩