Sharp-switching Z²-FET device in 14 nm FDSOI technology

H. El Dirani (1) , Y. Solaro (1) , P. Fonteneau (2) , P. Ferrari (1) , S. Cristoloveanu (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

Z 2 -FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, an adjustable triggering voltage (V ON ), and can be considered for Electro-Static Discharge (ESD). The operation of our device relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained on the 14 nm FDSOI (Fully Depleted SOI) node.

Mots clés: 1T-DRAM; Zero Impact Ionization and Zero Subthreshold Slope FET (Z2-FET); Electro-Static Discharge (ESD); Sharp Switch; Fully Depleted SOI (FDSOI)

Domaines: Micro et nanotechnologies/Microélectronique

H. El Dirani, Y. Solaro, P. Fonteneau, P. Ferrari, S. Cristoloveanu. Sharp-switching Z²-FET device in 14 nm FDSOI technology. 2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.250-253, ⟨10.1109/ESSDERC.2015.7324761⟩. ⟨hal-02004208⟩