Low-frequency noise in bare SOI wafers: Experiments and model

Luca Pirro (1) , Irina Ionica (1) , Sorin Cristoloveanu (1) , Gérard Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

Noise measurements are efficient for interface trap density characterization in MOSFETs and can be extended to bare silicon-on-insulator wafers. A physical model to explain the experimental results will be presented. The impact of measurement parameters, like die area and probe distance, is discussed comparing experimental and calculated characteristics. Important clarifications concerning the effective die area contributing to noise response will be pointed out.

Mots clés: low frequency noise; pseudo-MOSFET; SOI; interface trap density

Domaines: Micro et nanotechnologies/Microélectronique

Luca Pirro, Irina Ionica, Sorin Cristoloveanu, Gérard Ghibaudo. Low-frequency noise in bare SOI wafers: Experiments and model. 2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.286-289, ⟨10.1109/ESSDERC.2015.7324770⟩. ⟨hal-02004194⟩