Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28nm FD-SOI technology

Sotirios Athanasiou (1) , Charles-Alexandre Legrand (2) , Sorin Cristoloveanu (1) , Philippe Galy (2)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness of the device is optimized, achieving a maximum breakdown voltage (VBR) of 4.9 V. In addition, modifications of the gate length modulate the trigger voltage (Vt1) with a minimum value of 3.5 V. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation. A lower doping of the base enhances the bipolar gain, leading to thyristor behavior. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior.

Mots clés: CMOS; Electrostatic discharges; ESD; FD-SOI; Gated diode LBJT; MOSFET; SOI; Thyristor

Domaines: Micro et nanotechnologies/Microélectronique

Sotirios Athanasiou, Charles-Alexandre Legrand, Sorin Cristoloveanu, Philippe Galy. Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28nm FD-SOI technology. Solid-State Electronics, 2017, 128, pp.172-179. ⟨10.1016/j.sse.2016.10.026⟩. ⟨hal-02003235⟩