A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

Hassan El Dirani (1) , Yohann Solaro (1) , Pascal Fonteneau (2) , Charles-Alex Legrand (2) , David Marin-Cudraz (2) , Dominique Golanski (2) , Philippe Ferrari (1) , Sorin Cristoloveanu (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node.

Domaines: Micro et nanotechnologies/Microélectronique

Hassan El Dirani, Yohann Solaro, Pascal Fonteneau, Charles-Alex Legrand, David Marin-Cudraz, et al.. A band-modulation device in advanced FDSOI technology: Sharp switching characteristics. Solid-State Electronics, 2016, 125, pp.103-110. ⟨10.1016/j.sse.2016.07.018⟩. ⟨hal-02003135⟩