Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs

R. Lavieville (1) , T. Karatsori (1, 2) , C. Theodorou (1) , S. Barraud (3) , C. Dimitriadis (2) , G. Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 Aristotle University of Thessaloniki, Department of Physics
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

A detailed statistical characterization of drain current local and global variability in sub 15nm gate length Si/SiGe Trigate NW pMOSFETs is carried out. An analytical mismatch model is used to extract the main matching parameters. Our results indicate that, despite their very aggressive dimensions, such devices maintain relatively good variability performance.

Mots clés: Modelling; Trigate nanowire; Mismatch; Drain Current; Characterization; Variability

Domaines: Micro et nanotechnologies/Microélectronique; Electronique

R. Lavieville, T. Karatsori, C. Theodorou, S. Barraud, C. Dimitriadis, et al.. Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. 2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.142-145, ⟨10.1109/ESSDERC.2016.7599607⟩. ⟨hal-02002267⟩