Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs

E. Ioannidis (1, 2) , S. Haendler (3) , C. Theodorou (1, 2) , N. Planes (3) , C. Dimitriadis (2) , G. Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 Aristotle University of Thessaloniki
3 ST-CROLLES - STMicroelectronics [Crolles]

The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time. It is shown that, for small rise time of ramp gate voltage, the drain current characteristics I d (V g ) exhibit a huge sweep-to-sweep dispersion due to the low frequency noise. Such a single device dynamic variability, which scales as the reciprocal square root of device area, is added to the static mismatch contribution and could amount up to ≈30% of static variability sources.

Domaines: Micro et nanotechnologies/Microélectronique; Electronique

E. Ioannidis, S. Haendler, C. Theodorou, N. Planes, C. Dimitriadis, et al.. Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. 2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.214-217, ⟨10.1109/ESSDERC.2014.6948798⟩. ⟨hal-02001909⟩