High temperatures and Raman scattering through pulsed spectroscopy and CCD detection

P. Simon (1) , B. Moulin (1) , E. Buixaderas (1) , N. Raimboux (1) , E. Hérault (2) , B. Chazallon (1) , H. Cattey (1) , N. Magneron (1) , J. Oswalt , D. Hocrelle

1 CRMHT - Centre de recherches sur les matériaux à haute température
2 Ecole Polytechnique de l'Université d'Orléans

A Raman scattering system devoted to high temperatures is presented. It is based on a pulsed system to remove thermal emission with retaining charge-coupled device (CCD) detection. Two types of optical gating are used: a Pockels switch or an intensified CCD (ICCD), combining in this case the optical gate and the CCD detection. The performances of both systems are presented and their respective advantages are discussed and compared. The ICCD device allows recording of spectra in the 2000°C range, and typical results obtained on alumina and zirconia ceramics are shown.

Mots clés: Raman scattering; Pockels; high temperature; zirconia; intensified charge-coupled device

Domaines: Optique / photonique; Instrumentations et Détecteurs [physics.ins-det]

P. Simon, B. Moulin, E. Buixaderas, N. Raimboux, E. Hérault, et al.. High temperatures and Raman scattering through pulsed spectroscopy and CCD detection. Journal of Raman Spectroscopy, 2003, 34 (7-8), pp.497-504. ⟨10.1002/jrs.1020⟩. ⟨hal-01996753⟩