GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

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https://hal.archives-ouvertes.fr/hal-01981711
Contributor : Gwénolé Jacopin <>
Submitted on : Tuesday, January 15, 2019 - 11:20:38 AM
Last modification on : Wednesday, February 13, 2019 - 10:06:06 AM

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C. Haller, J.-F. Carlin, G. Jacopin, W. Liu, D. Martin, et al.. GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells. Applied Physics Letters, American Institute of Physics, 2018, 113 (11), pp.111106. ⟨10.1063/1.5048010⟩. ⟨hal-01981711⟩

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