Layer thickness impact on Second Harmonic Generation characterization of SOI wafers

D. Damianos (1) , I. Ionica (1) , J. Changala (2) , M. Lei (2) , A. Kaminski-Cachopo (1) , D. Blanc-Pelissier (3) , S. Cristoloveanu (1) , G. Vitrant (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 Femtometrix
3 INL - PV - INL - Photovoltaïque

This paper presents Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. As a result of this behavior the SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

Mots clés: SOI; nonlinear optics modeling; Second Harmonic Generation; multilayers.

Domaines: Matériaux; Micro et nanotechnologies/Microélectronique

D. Damianos, I. Ionica, J. Changala, M. Lei, A. Kaminski-Cachopo, et al.. Layer thickness impact on Second Harmonic Generation characterization of SOI wafers. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.184-187, ⟨10.1109/ULIS.2017.7962557⟩. ⟨hal-01974416⟩