Transient second harmonic generation and correlation with Ψ-MOSFET in SOI wafers

D. Damianos (1) , I. Ionica (1) , A. Kaminski-Cachopo (1) , G. Vitrant (1) , S. Cristoloveanu (1) , D. Pelissier (2) , M. Kryger (3) , J. Changala (3)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 INL - PV - INL - Photovoltaïque
3 Femtometrix

Silicon-on-Insulator (SOI) wafers are characterized using a non-destructive second harmonic generation (SHG) method. Correlation between the electrical parameters extracted from pseudo-MOSFET characteristics and the SHG signal is demonstrated. A simple quantitative model allows reproduction of the SHG signal curves.

Mots clés: Transient SHG; Modeling; pseudo-MOSFET; Silicon-on-Insulator

Domaines: Matériaux; Micro et nanotechnologies/Microélectronique

D. Damianos, I. Ionica, A. Kaminski-Cachopo, G. Vitrant, S. Cristoloveanu, et al.. Transient second harmonic generation and correlation with Ψ-MOSFET in SOI wafers. 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.222-225, ⟨10.1109/ULIS.2016.7440093⟩. ⟨hal-01974394⟩