Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Xiao-Xi Li , Zhi-Qiang Fan (1) , Pei-Zhi Li , Mao-Lin Li , Xin Li (2) , Chuan-Kun Jia , Dong-Ming Sun , Xiang-Wei Jia , Zheng Han , Vincent Bouchiat (3) , Jun-Jie Guo , Jian-Hao Chen , Zhi-Dong Zhang

1 State Key Lab Chem Eng Zhejiang Univ
2 BUPT - Beijing University of Posts ans Telecommunications
3 NEEL - Quan2m - Interactions modulables dans des états quantiques 2D

Domaines: Physique [physics]

Xiao-Xi Li, Zhi-Qiang Fan, Pei-Zhi Li, Mao-Lin Li, Xin Li, et al.. Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor. Nature Communications, 2017, 8, pp.970. ⟨10.1038/s41467-017-01128-9⟩. ⟨hal-01971576⟩