New parameter extraction method based on split C-V for FDSOI MOSFETs

I. Ben Akkez (1, 2) , A. Cros (2) , C. Fenouillet-Beranger (2, 3) , F. Boeuf (2) , Quentin Rafhay (1) , F. Balestra (1) , G. Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

A new parameter extraction methodology based on split C-V is proposed for FDSOI MOS devices. To this end, a detailed capacitance theoretical analysis is first conducted emphasizing the usefulness of the Maserjian function. Split C-V measurements carried out on various FDSOI CMOS technologies show that the Maserjian function exhibits a power law dependence with inversion charge as ∝ Qi -2 whatever the carrier type and gate oxide thickness. This feature enables to confirm the validity of a two-parameter simple capacitance model and allows reliable MOSFET parameter extraction.

Domaines: Micro et nanotechnologies/Microélectronique

I. Ben Akkez, A. Cros, C. Fenouillet-Beranger, F. Boeuf, Quentin Rafhay, et al.. New parameter extraction method based on split C-V for FDSOI MOSFETs. 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2012, Bordeaux, France. ⟨10.1109/ESSDERC.2012.6343372⟩. ⟨hal-01959345⟩