Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology

Jean-Baptiste Henry (1, 2) , Antoine Cros (1) , Julien Rosa (1) , Quentin Rafhay (2) , Gérard Ghibaudo (2)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

In this work, an upgraded version of the so called New Y function MOSFET parameter extraction methodology is proposed, taking the impact of access resistance into account. This new approach emphasizes the importance of considering access resistance variation with gate bias when extracting MOSFET parameters.

Mots clés: Access resistance; model; FDSOI; parameters extraction methodology

Domaines: Micro et nanotechnologies/Microélectronique

Jean-Baptiste Henry, Antoine Cros, Julien Rosa, Quentin Rafhay, Gérard Ghibaudo. Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology. 2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.68-72, ⟨10.1109/ICMTS.2017.7954269⟩. ⟨hal-01959125⟩