Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Viet Hung Nguyen (1) , Jérôme Saint-Martin (2, 3) , Damien Querlioz (3) , Fulvio Mazzamuto (3) , Arnaud Bournel (3) , Yann-Michel Niquet (4) , Philippe Dollfus (3)

1 UNITN - Università degli Studi di Trento = University of Trento
2 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]
3 IEF - Institut d'électronique fondamentale
4 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures

Domaines: Micro et nanotechnologies/Microélectronique; Electronique

Viet Hung Nguyen, Jérôme Saint-Martin, Damien Querlioz, Fulvio Mazzamuto, Arnaud Bournel, et al.. Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance. Journal of Computational Electronics, 2013, 12 (2), pp.85-93. ⟨hal-01951935⟩