Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs

E. Ioannidis (1) , C. Theodorou (1) , S. Haendler (2) , E. Josse (2) , C. Dimitriadis (3) , G. Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]
3 Aristotle University of Thessaloniki, Department of Physics

In this letter, we demonstrate the existence of the source-drain series resistance mismatch and its impact on drain current variability with regard to the other mismatch parameters. To this end, we propose a new methodology for the drain current mismatch study based on Y-function, enabling a precise determination of the various variability sources in advanced fully depleted silicon on insulator (SOI) MOS devices.

Mots clés: Y function; matching; Static mismatch variability; characterization

Domaines: Micro et nanotechnologies/Microélectronique

E. Ioannidis, C. Theodorou, S. Haendler, E. Josse, C. Dimitriadis, et al.. Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs. IEEE Electron Device Letters, 2015, 36 (5), pp.433-435. ⟨10.1109/LED.2015.2411289⟩. ⟨hal-01947636⟩