Density of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth rates

A. Michon (1) , G. Patriarche (1) , G. Beaudoin (1) , Guillaume Saint-Girons (1) , N. Gogneau (1) , I. Sagnes (1)

1 LPN - Laboratoire de photonique et de nanostructures

This letter studies and differentiates the influence of both InAs growth rate and cap-layer growth rate on the density of capped InAs∕InP(001) quantum dots (QDs) grown by metal-organic vapor phase epitaxy. The study shows that a decrease of the cap-layer growth rate leads to a reduction of the QD density. This reduction of QD density is of the same order as the kinetic reduction of QD density when decreasing InAs growth rate. Decreasing both InAs and cap-layer growth rates allows one to obtain a low density (9×107/cm2) of QD emitting at around 1.55µm.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

A. Michon, G. Patriarche, G. Beaudoin, Guillaume Saint-Girons, N. Gogneau, et al.. Density of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth rates. Applied Physics Letters, 2007, 91 (10), pp.102107. ⟨10.1063/1.2779101⟩. ⟨hal-01939911⟩