Indium incorporation in In-rich In x Ga 1 − x As ∕ GaAs layers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dots - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2006

Indium incorporation in In-rich In x Ga 1 − x As ∕ GaAs layers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dots

Guillaume Saint-Girons
INL - Hétéroepitaxie et Nanostructures
CV
Isabelle Sagnes
Laboratoire de photonique et de nanostructures
Gilles Patriarche
Laboratoire de photonique et de nanostructures

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Science des matériaux [cond-mat.mtrl-sci]

Guillaume Saint-Girons  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01939899

Soumis le : jeudi 29 novembre 2018-19:40:33

Dernière modification le : mercredi 20 septembre 2023-13:10:03

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hal-01939899 , version 1 (29-11-2018)

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Guillaume Saint-Girons, Isabelle Sagnes, Gilles Patriarche. Indium incorporation in In-rich In x Ga 1 − x As ∕ GaAs layers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dots. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73 (4). ⟨hal-01939899⟩

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