Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

Nikolaos Tsavdaris (1) , Pawel Kwasnicki (2) , Kanaparin Ariyawong (1) , Nathalie Valle (3) , Herve Peyre (2, 4) , Eirini Sarigiannidou (1) , Sandrine Juillaguet (2, 4) , Didier Chaussende (1)

1 LMGP - Laboratoire des matériaux et du génie physique
2 L2C - Laboratoire Charles Coulomb
3 Département Science et Analyse des Matériaux - SAM (Belvaux, Luxembourg)
4 SMC - Semi-conducteurs: Graphène, Grand gap & Photovoltaïque

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

Domaines: Matière Condensée [cond-mat]; Matériaux

Nikolaos Tsavdaris, Pawel Kwasnicki, Kanaparin Ariyawong, Nathalie Valle, Herve Peyre, et al.. Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC. ECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩. ⟨hal-01936649⟩