Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Sylvie Contreras (1, 2) , Leszek Konczewicz (1, 2) , Pawel Kwasnicki (1, 2) , Roxana Arvinte , Herve Peyre (1, 2) , Thierry Chassagne (3) , Marcin Zielinski (3) , Maria Kayambaki , Sandrine Juillaguet (1, 2) , Konstantinos Zekentes

1 L2C - Laboratoire Charles Coulomb
2 SMC - Semi-conducteurs: Graphène, Grand gap & Photovoltaïque
3 NOVASiC

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Domaines: Matière Condensée [cond-mat]; Science des matériaux [cond-mat.mtrl-sci]

Sylvie Contreras, Leszek Konczewicz, Pawel Kwasnicki, Roxana Arvinte, Herve Peyre, et al.. Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC. 16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩. ⟨hal-01936580⟩